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Single Voltage pHEMT Transistor

Fri, 09/28/2001 - 10:01am
Agilent Technologies has introduced a new low-current, single-voltage small-signal transistor based upon Agilent's E-pHEMT technology. Compared to other GaAs transistors, the Agilent ATF-55143 has the important benefit of being a single voltage device, eliminating the need for an additional negative voltage for biasing.

The ATF-55143 can enhance receiver performance in cellular/PCS and WCDMA handsets, mobile devices/data-cards, and other low-current wireless receiver applications in the 450 MHz to 6 GHz frequency range. In particular, the ATF-55143 offers very low noise figure, high gain and good linearity compared to existing SiGe (silicon-germanium) transistors at both the PCS/cellular and WCDMA frequency bands. In addition, the ATF-55143 can be designed into applications above 2 GHz with very small degradation in device performance.

Typical performance at 2 GHz biased at 2.7 V and 10 mA is 0.6 dB noise figure, 17.7 dB associated gain, +24.2 dBm output IP3 and +6.5 dBm input IP3.

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