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SiGe:C Integrated RF Cascode Amplifier

Fri, 09/28/2001 - 10:41am

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Motorola Inc.'s Semiconductor Products Sector has introduced a cost-effective, high isolation cascode amplifier using Silicon Germanium:Carbon (SiGe:C) technology. This unique amplifier can help to simplify RF designs for 100 MHz to 2.5 GHz applications, and is available in the ultra-small SOT-343R miniature surface mount package.

The MBC13916 General Purpose SiGe:C RF Cascode Amplifier is intended to be a similar, but improved, replacement for the MRFIC0916. This newer cascode amplifier utilizes the SiGe:C module of Motorola's 0.35 micron RF BiCMOS process to realize significant performance improvements over the older device.

The device has on-chip bias circuitry that sets the bias point, while off-chip matching maximizes design flexibility and efficiency. The MBC13916 offers improved performance with lower noise figure specifications, and higher small signal gain at 2.5 GHz. The IC has a minimum noise figure (NFmin) of 0.9 dB at the device level, and a noise figure (NF) of 1.25 dB in a typical circuit at 900 MHz. At 1.9 GHz, the NFmin is 1.9 dB, and the NF is 2.1 dB in a typical circuit. High frequency gain at 2.5 GHz has also been improved. The drain current is 4.7 mA at a Vcc of 2.7 V.

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