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Power Amplifier Optimized for Linear Operation

Fri, 09/28/2001 - 9:40am
Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage power amplifier optimized for linear operation with a typical third order intercept point (IP3) of +36 dBm. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this power amplifier covers the 26 to 40 GHz frequency bands. The MMIC device also has a typical small signal gain of 12 dB and includes Lange couplers to achieve good input/output return loss.

This power amplifier, identified as XP1001, provides equipment designers with an optimized product with good linearity and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. Mimix Broadband also offers this same power amplifier, identified as XP1002, with an on-chip temperature compensated, output power detector.

Mimix performs 100% on-wafer RF, DC and output power testing on the XP1001, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

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