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Gain Block Amplifier

Fri, 09/28/2001 - 10:01am
Mimix Broadband announced the introduction of a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage gain block amplifier, which can be operated with all three stages biased in parallel. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this gain block amplifier covers the 17 to 27 GHz frequency bands. The MMIC device also has a typical small signal gain of 22 dB with a typical noise figure of 3 dB across the band.

This gain block amplifier, identified as XB1000, can be biased for low noise performance or high power performance and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. Mimix Broadband also offers this same gain block amplifier, identified as XB1001, with a typical small signal gain of 18 dB for applications requiring lower gain.

Mimix performs 100% on-wafer RF, DC and noise figure testing on the XB1000, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

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