Product Releases

SiGe Low Noise Amplifier

Mon, 08/13/2001 - 11:02am


Atmel® announced a new triple gain low-noise amplifier (LNA) manufactured in Silicon-Germanium (SiGe) technology. The IC T0952 is a new member of Atmel's SiGe LNA family and can be used for conventional superheterodyne or direct-conversion receivers in 1800 MHz to 2000 MHz PCN (GSM 1800) and PCS mobile phone applications.

The new LNA T0952 with 3-stage amplifier and switchable gain provides the perfect combination of low noise (NF = 2.5 dB in high-gain mode), large signal capability (IIP3= -8 dBm in low-gain mode) and high reverse isolation (>40 dB). A high reverse isolation ensures that no power will be emitted between mixer and antenna in direct-conversion applications. The resulting high dynamic range ensures maximum reception quality at both very small and very large signal levels.

The new circuits are easy to use. Design-in can be carried out quickly with only few external components. The low noise figure at simultaneously good 50 ohm matching additionally simplifies design-in. Both low current consumption (IS = 10 mA at low gain mode) and power-down function help to extend battery lifetime. The calibration mode is especially suited for direct conversion receivers (DCR) during DC-calibration period and offers a better impedance matching at the output compared to the output matching of inactive LNA.


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