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RF SiGe Front End Integrated Circuit

Thu, 06/28/2001 - 7:33am

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Atmel® announced the availability of its well-known highly integrated RF Silicon-Germanium (SiGe) front end IC (including a low-noise amplifier and a power amplifier) for the radio part of long range, 100 meter, Bluetooth™ systems in Flipchip technology. Due to Flipchip technology, the T7024 is much smaller and more cost-effective than conventionally-packaged Gallium-Arsenide (GaAs) solutions. With a die size of 1.6 × 3.2 mm and a pitch size of 400 μ, it fits into the smallest applications. For easy assembly, two additional small-sized packages are also available (MLP20 with 5 × 5 mm and PSSOP20).

The T7024's low noise amplifier provides a very low noise figure (2.3 dB typ.) which together with the single-chip transceiver T2901 increases the overall sensitivity from -80 dBm to -90 dBm, and so exceeds the 100 meter Bluetooth requirements by 20 dB.

The power added efficiency (PAE) value is about 40% at 2.4 GHz, the current consumption is as low as 170 mA. Switching to standby mode helps to even further reduce the current consumption to 10 μA.

A programmable transmit/receive switch driver feeds the current through an external PIN diode into a lambda/4 transmission line. This saves external components such as a switching transistor or an antenna switch (e.g. GaAs IC) as required with other solutions.

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