As mechanical systems are replaced with electronics, the increase in automobile power requirements has prompted the transition from the traditional 12V to a 42V battery to limit current requirements and control wire size and cost. This new 75V MOSFET is designed specifically for these systems that will begin to appear in new car models as early as 2003.
The FDB06AN08A1 N-Channel trench MOSFET features ultra-low RDS(on) (6.3 milliohm, max. at room temperature), 75V breakdown voltage, 175 °C maximum junction temperature, an internal gate resistor and unclamped inductive surge (UIS) capability for single (1200mJ @ 75A) and repetitive pulses. Additionally, the die size of the FDB06AN08A1 leaves a substantial amount of D2-Pak (TO263) space available, allowing for die size flexibility and the potential to further lower the RDS(on) for the same package size.