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GaAs RFIC, Schottky-Barrier and PIN Diodes

Mon, 06/11/2001 - 4:49am

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Agilent Technologies announced a GaAs RFIC and a series of single and dual Schottky-barrier and PIN Diodes in the new surface mount MiniPak package. The package features a height of only 0.7 mm max and a footprint of only 1.75 square mm, combined with very low parasitics, and high thermal conductivity for higher power dissipation.

Targeted at wireless handset and ISM band applications, the MiniPak package is 60 percent smaller than the industry standard SC-70 package. The GaAs RFIC, MGA-725M4, is a high performance low noise amplifier (LNA) with a bypass switch. The diodes are available in single and dual versions, and feature matched diodes for consistent performance. Agilent's manufacturing techniques assure that dice packaged in pairs are taken from adjacent sites on the wafer, assuring the highest degree of match.

The MGA-725M4 LNA features a noise figure of 1.5 dB, gain of 14.4 dB, and Input IP3 of +10.5 dBm, all at a bias of 3 V, 20 mA at 2 GHz. This product has already been successful in SC-70 in handset applications.

The Agilent HMPS-282x series of Schottky-barrier diodes provides consistent performance with applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up to 6 GHz. These diodes feature low turn-on voltage (as low as 0.34 V at 1 mA)

The Agilent HMPP-386x series of general purpose PIN diodes is designed for attenuators, where current consumption is the most important design consideration; and for RF switching, where low capacitance with no reverse bias is the driving issue for the designer.

The Agilent HMPP-389x series of RF PIN switch diodes is optimized for switching applications where low resistance at low current combined with low capacitance is required. Low junction capacitance of the PIN diode chip, combined with ultra-low package parasitics, mean that these products may be used at frequencies which are higher than the upper limit for conventional pin diodes.

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