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GaAs pHEMT MMIC Receiver on a Single Chip

Wed, 05/30/2001 - 11:55am

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Mimix Broadband introduced a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver on a single chip. This device is a three stage low noise amplifier (LNA) followed by an image reject fundamental mixer using Lange couplers to improve bandwidth. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the receiver covers the 17 to 27 GHz frequency band. Furthermore, this receiver has a typical small signal conversion gain of 10 dB with a typical noise figure of 3.5 dB and 15 dB typical image rejection across the band.

This receiver, identified as XR1000, provides equipment designers with a highly integrated product to facilitate the design process and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

Mimix performs 100% on-wafer RF and DC testing on the XR1000, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

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