The UPC3215TB is manufactured using NEC's latest 25 GHz f UHSO Silicon Bipolar Process. This process employs direct silicon nitride passivation film and gold electrodes resulting in excellent performance, consistency and reliability. The device is housed in a miniature 6-pin SOT-363 package and available on tape and reel for high volume automated assembly.
Silicon RFIC 2.9 GHz Wideband Amplifier
Fri, 04/06/2001 - 5:20am
California Eastern Laboratories has added another wideband amplifier to its broad line of NEC Silicon RFICs. The new 5 Volt UPC3215TB delivers 3 dB of bandwidth with 20 dB gain making it ideal for satellite receivers, LNBs, and other multichannel wideband applications. The UPC3215TB offers excellent isolation, great noise figure and good input matching over the band for minimal mismatch problems. Performance specifications include a bandwidth of 3 dB, frequency of 2.9 GHz, a gain of 20 dB typical, noise figure of 2.3 dB, a P output power of 1.5 dB, an isolation of 44 dB and a supply voltage of 5 V.