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RF Power Aluminum Nitride Resistors and Terminations

Fri, 04/06/2001 - 5:20am
Anaren Microwave, Inc., announced the introduction of a new line of RF Power Thick film aluminum Nitride (ALN) resistors and terminations designed as an alternative to the Beryllium Oxide (BeO) ceramic widely used today.

The range of components includes several different products. The first release in 2000 consisted of 10, 30, 100 and 150-Watt components in a variety of package styles including chip, flangeless and flanged. Further releases added a line of surface mount components as well as additions to the existing styles. Applications include RF power amplifiers, isolators, absorptive filters, antenna feeds and power combiners.

Traditionally, RF power resistive components incorporated the use of Beryllium Oxide (BeO) ceramic substrate but due to international pressure to remove BeO from products, alternative materials such as ALN have received much attention in the wireless industry and have emerged as the front-runner BeO alternative.

ALN has been used in the RF industry for many years as a general-purpose electricity insulating heat spreader and thin film substrate. Traditionally, ALN resistive devices have been constructed using thin-film technology but due to the high cost of the thin film process their applications have been limited. With the emergence of the wireless industry and subsequent need for cost-effective and safe BeO alternative, manufactures have turned to the lower-cost thick film technology to meet the demand.

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