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Power Amplifiers

Tue, 04/10/2001 - 8:38am
Fujitsu Compound Semiconductor (FCSI) announces the expansion of their GaAs MMIC Power Amplifier product line. FCSI is introducing four new millimeter-wave, high power MMIC amplifier products covering the 17.5 to 31.5 GHz frequency band with output power ranging between 26 to 31 dBm. These new devices are designed for point-to-point or point-to-multipoint radio link and Local Multipoint Distribution System (LMDS) applications. With the use of their 0.25(m gate length PHEMT process technology and input/output 50-ohm matching, these devices ease the customer's design implementation.

The FMM5803X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 27.5 to 31.5 GHz frequency range with a 30 dBm output, a 12/14 dB power gain, and a 20% Nadd.

The FMM5805X is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the 17.5-20.0 GHz frequency range with a 31 dBm output, a 21 dB power gain, and a 30% Nadd.

The FMM5806X is a high-gain, wide band 2-stage MMIC amplifier designed for operation in the 24.0-27.0 GHz frequency range with a 26 dBm output, a 9.5 dB power gain, and a 25% Nadd.

The FMM5807X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 21-27 GHz frequency range with a 29/30 dBm output, a 14 dB power gain, and a 20% Nadd.

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