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Integrated GaAs pHEMT MMIC Receiver

Mon, 04/30/2001 - 6:15am

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Mimix Broadband announced the introduction of a totally integrated gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver on a single chip. This device is a three stage low noise amplifier (LNA) followed by an image reject fundamental mixer using Lange couplers to optimize bandwidth. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the receiver covers the 17 to 27 GHz frequency band. Furthermore, this receiver has a typical small signal conversion gain of 10 dB with a typical noise figure of 3.5 dB and 15 dB typical image rejection across the band.

This receiver, identified as XR1000, provides equipment designers with a highly integrated product to facilitate the design process and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

By integrating the image reject mixer, the XR1000 allows good noise figure to be obtained over wide bandwidths without requiring image noise rejection filters between the LNA and the mixer. The wide bandwidth of the modified single balanced rat-race mixers is obtained through the use of Lange couplers to shorten the electrical length of the rat-race.

Mimix performs 100% on-wafer RF and DC testing on the XR1000, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

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