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GaAs MMIC Power Amplifier

Fri, 04/06/2001 - 5:21am

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Mimix Broadband introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage power amplifier optimized for linear operation with a typical third order intercept point (IP3) of 36 dBm. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 24 GHz frequency band and has a typical small signal gain of 18 dB. Furthermore, this device includes Lange couples to achieve good input/output return loss (15 dB) and an on-chip temperature compensated output power detector.

This power amplifier, identified as XP1000, provides equipment designers with a product that features good linearity and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

Mimix performs 100% on-wafer RF, DC and output power testing on the XP1000, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

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