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90 Watt LDMOS RF Power Transistors for UMTS

Fri, 04/06/2001 - 5:20am
UltraRF, Inc., a leader in manufacturing high-power, high-performance laterally diffused metal oxide silicon (LDMOS) RF power semiconductors for the wireless industry, announces its UPF21090 discrete RF power transistor.

The UPF21090 UltraGOLDII™ LDMOS product is specifically designed for UMTS base station applications in the 2.1 GHz to 2.2 GHz band. It is ideal for high power wideband CDMA RF power amplifiers in Class A or Class AB operation.

The UPF21090 transistor operates at 28V with a broadband RF output power rating of 90 watts. Fabricated with the proprietary UltraRF UltraGOLDII™ LDMOS technology, the discrete transistor features a high level of performance, industry standard packaging and an all-gold metal system for high reliability.

The UPF21090 RF power transistor, with its rugged performance, is a suggested replacement for Motorola part number MRF21090. The device has compatible source and load impedance and can be dropped into existing power amplifier designs with little or no circuit matching changes.

The UPF21090 industry standard discrete power transistor is available in production quantities now. The UPF21090 is the latest addition to the range of industry standard second source LDMOS devices from UltraRF.

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