The UPC8182TB is manufactured using NEC's latest 25 GHz f UHSO Silicon Bipolar Process. This process employs direct silicon nitride passivation film and gold electrodes resulting in excellent performance, consistency and reliability. The UPC8182TB is housed in a miniature 6-pin SOT-363 package and available on tape and reel for high volume automated assembly.
2.9 GHz RFIC Driver Amplifier for Mobile Communications
Fri, 04/06/2001 - 5:20am
California Eastern Labs has added a new medium power amplifier to its broad line of NEC Silicon RFICs. The versatile new UPC8182TB has an upper operating frequency of 2.9 GHz at 3 dB bandwidth making it ideal for a variety of mobile communications applications. Designed to drive two-stage Pas, the UPC8182TB also offers 3 dB isolation to minimize a PA's loading effects. Performance specifications include a typical output power of (at 0.9 GHz) 9.5 dBm, (at 1.9 GHz) 9.0 dBm, (at 2.4 GHz) 8.0 dBm. The power gain specifications include (at 0.9 GHz) 21.5 dBm, (at 1.9 GHz) 20.5 dBm, (at 2.4 GHz) 20.5 dBm, a supply voltage of 2.7 to 3.3 Volts and a circuit current of 30 mA typical at 3.0 V.