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Silicon Germanium Low Noise Amplifier For Bluetooth Applications

Wed, 02/21/2001 - 8:22am
RF Micro Devices announced the availability of the RF2472 — a SiGe (Silicon Germanium) low noise amplifier for use in Bluetooth and cellular phone applications. The RF2472 offers a low noise figure of 1.5 dB and more than 14 dB of gain in the 2.4 GHz ISM-band where Bluetooth systems operate. The part is also characterized at 1.9 GHz operation and is well suited for PCS handset applications. It draws 6 mA from a 3.0-volt supply and has a power down mode, reducing its current consumption to under 1 uA.

The high linearity provided by the device at low DC operating conditions make it an optimum solution in a wide variety of battery powered wireless applications. The RF2472 is being applied in Bluetooth modules where it is used to extend the range of the transceiver. The device is also used in PCS and cellular phone radio front ends, both TDMA and CDMA. Capable of operating from DC to 6 GHz, the part could also be applied to 900 MHz systems and GPS receivers.

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