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Field Effect Transistor

Wed, 02/21/2001 - 8:23am
Designed for cellular, GSM, D-AMPS, CDMA and EDGE applications, the PTF10195 GOLDMOS field effect transistor operates with typical efficiency of 53% and typical gain of 14 dB. Output power is 125 Watts minimum at 894 MHz when operating from a 28 Vdc supply. The PTF10195 provides superior IMD performance to bipolar transistors, largely due to the more linear transfer function of LDMOS compared to bipolar technology. The field effect transistor is packaged in a push-pull configuration. The inputs and outputs of which are internally matched to optimize broadband performance.

The PTF10195 is made using nitride surface passivation and full gold metallization to ensure excellent operating life and reliability. The device uses gold wire for greater reliability in systems amplifying time varying waveforms. Ericsson's all gold system eliminates intermetallic failures associated with mixed metal systems.

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