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Field Effect Transistor For Cellular Radio Applications

Wed, 02/21/2001 - 8:23am
Ericsson Microelectronics has introduced the PTF10161 GOLDMOS® field effect transistor. The component delivers a minimum of 165 Watts RF output at 894 MHz from a 28 Volt supply. Typical figures for efficiency and power gain are 50% and 16dB respectively. The PTF10161 is designed for use in cellular radio applications from 869 MHz to 894 MHz and provides superior IMD performance to bipolar transistors, largely due to the more linear transfer function of LDMOS compared to bipolar technology. The field effect transistor is packaged in a push-pull configuration. The inputs and outputs of which are internally matched to optimize broadband performance.

The PTF10161 is made using nitride surface passivation and full gold metallization to ensure its operating life and reliability. The device uses gold wire for greater reliability in systems amplifying time varying waveforms. Ericsson's all gold system eliminates intermetallic failures associated with mixed metal systems.

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