Advanced Power Electronics (San Jose, CA) has recently launched new cost-effective N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance. The AP99T03GS-HF-3 MOSFET comes in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. Devices are well-suited for low voltage applications such as DC-DC converters, and are also available as the AP99T03GP-HF-3 in a TO-220 through-hole package which is ideal for applications where a small PCB footprint or an attached heatsink is required. Features include:
- A low on-resistance of only 2.5 mΩ.
- A drain-source breakdown voltage of 30 V.
- A continuous drain current of 120 A.
For more information, visit www.a-powerusa.com.