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M/A-COM Tech Asia introduced a 2.5 to 4 GHz gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) core chip, which consists of integrated transmit/receive switches, a low noise amplifier (LNA), a 6-bit phase shifter, a 6-bit attenuator and a driver amplifier.

This core chip, identified as XZ1001-BD, features compensated on-chip gate bias and delivers 33 dB transmit/receive gain, 20 dBm transmit/receive P1dB, and 2.5 dB receive noise figure. The XZ1001-BD is well suited for both military and weather phased array radar applications and satellite communications systems.

M/A-COM Tech Asia performs 100% on-wafer RF, DC and output power testing on the XZ1001-BD, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Production samples and parts are available today from stock. The XZ1001-BD datasheet and additional product information can be obtained from the M/A-COM Tech Asia website at www.macomtechasia.com.

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