Advertisement
GaAs / FET / IC

5V Gain Block Offers 2-30GHz Performance

April 9, 2015 5:59 pm | by RFMW, Ltd. | RFMW, Ltd. | Product Releases | Comments

RFMW, Ltd. announces design and sales support for the TGA3504-SM, 2 to 30GHz Gain Block from TriQuint (Qorvo). The TGA3504-SM offers 8dBm of output P1dB with a corresponding small signal gain of up to 11.5dB. Output third order intercept is >17dBm. Wideband performance of the TGA3504-SM supports multiple applications such as Electronic ... 

LISTED UNDER: Amplifiers | GaAs / FET / IC

2-30 GHz GaAs Wideband Gain Block

March 11, 2015 11:58 am | by RFMW, Ltd. | RFMW, Ltd. | Product Releases | Comments

RFMW, Ltd. announces design and sales support for the TGA3503-SM, 2 to 30GHz Gain Block from TriQuint (Qorvo). The TGA3503-SM offers 19dBm of output P1dB with a corresponding small signal gain of up to 10dB. Output third order intercept is >25dBm. Wideband performance of the TGA3503-SM supports multiple ... 

LISTED UNDER: Amplifiers | GaAs / FET / IC

Pasternack Announces Appointment of New Product Manager

January 26, 2015 11:33 am | by Pasternack | Product Releases | Comments

 Pasternack Enterprises welcomes Mr. Tim Galla as the company’s Product Manager for Active RF Components. Mr. Galla brings 25+ years of product devel ...                                       

LISTED UNDER: Amplifiers, Power | GaAs / FET / IC | Linear
Advertisement

Spectrum Control with Solid State Power Amplifiers

November 19, 2014 8:52 am | by WDD Staff | Product Releases | Comments

MtronPTI announced the second product line expansion in two months: introducing a full line of solid state RF power amplifiers. MtronPTI’s new products use state-of-the-art GaN, LDMOS, GaAs FET and chip-and-wire technologies complementary to their current RF & microwave filter products ... 

LISTED UNDER: Amplifiers, Power | GaAs / FET / IC

New GaN Power Amp Offers High Power, High Linearity, Excellent Efficiency

August 26, 2014 1:16 pm | by WDD Staff | Product Releases | Comments

Custom MMIC has announced the new 14-18 GHz GaN power amplifier in die form. The CMD216 delivers 16 dB of flat gain across the entire 14 to 18 GHz bandwidth...                                             

LISTED UNDER: GaAs / FET / IC

Front-to-Back Amplifier Solution from API Technologies

August 18, 2014 4:30 pm | by WDD Staff | Product Releases | Comments

API Technologies has announced a new line of Gallium Nitride (GaN) drivers to provide a complete, front-to-back amplifier solution for applications requiring high levels of gain and output power...                             

LISTED UNDER: Amplifiers, Other | Amplifiers, Power | GaAs / FET / IC

GaN LNAs from RFMW cover 2 to 12 GHz

August 18, 2014 3:58 pm | by WDD Staff | Product Releases | Comments

RFMW has announced support for a pair of GaN low noise amplifiers targeted at military and commercial radar applications as well as SatCom, point-to-point radio and WiMax applications...                                          

LISTED UNDER: Amplifiers, Power | GaAs / FET / IC | Low-noise

10 W Cascode GaN MMIC from RFMW Serves L-band

June 10, 2014 11:58 am | by WDD Staff | Product Releases | Comments

RFMW, Ltd. announces design and sales support for TriQuint's TGA2216-SM GaN, cascode amplifier operating from 0.1 - 3 GHz...

LISTED UNDER: Amplifiers, Other | GaAs / FET / IC
Advertisement

Pasternack Releases High Gain Amplifiers for Commercial and Military Radar

April 24, 2014 2:05 pm | by WDD Staff | Product Releases | Comments

Pasternack Enterprises, Inc., a manufacturer and supplier of RF, microwave and millimeter wave products, releases a new portfolio of L and S band high gain amplifiers covering 1.2 - 1.4 GHz and 3.1 – 3.5 GHz specifically used for commercial and military radar applications as well as observation satellites and communications systems...

LISTED UNDER: GaAs / FET / IC | Low-noise | Antennas, Broadcast / Satellite

Teseq Broadband Amplifier Offers Low Distortion, Reliability

April 21, 2014 7:16 pm | by WDD Staff | Product Releases | Comments

Teseq has expanded its broadband amplifier line to include a Class A linear and low distortion model that operates from 10 kHz to 400 MHz with a rated power level of 260 W...                     

LISTED UNDER: Amplifiers, Other | GaAs / FET / IC

Broadband Amplifier Line from Teseq Offers Low Distortion, Reliability

January 12, 2014 9:02 pm | by WDD Staff | Product Releases | Comments

Teseq has expanded its broadband amplifier line to include a Class A linear and low distortion model. Used in commercial or in-house EMC test laboratories, the CBA 400M-260 is ideal for automotive, military and aerospace BCI (bulk current injections) applications that require testing at higher levels...

LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential

Hittite Expands GaN MMIC Product Line

December 12, 2013 5:00 pm | by WDD Staff | Product Releases | Comments

Hittite Microwave announced a new Gallium Nitride (GaN) MMIC power amplifier product which offers significant performance, size and durability advantages for communications, test instrumentation and radar systems. The HMC7149 is a 10 W GaN MMIC Power Amplifier which operates...

LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential

80 W GaN Amplifier for S-Band Radar from TriQuint Semiconductor

November 20, 2013 10:44 am | by WDD Staff | Product Releases | Comments

RFMW announces design and sales support for the TGA2814, S-Band amplifier from TriQuint Semiconductor...

LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential

TriQuint Expands CATV Portfolio with Infrastructure Hybrids and GaN Amplifiers

November 6, 2013 11:29 am | by WDD Staff | Product Releases | Comments

TriQuint Semiconductor has released the first two members of its cost-effective TriAccess hybrid-packaged power doubler family...

LISTED UNDER: GaAs / FET / IC

New 28 V GaN-on-Si RF Power Amplifier from Nitronex

October 29, 2013 12:32 pm | by WDD Staff | Product Releases | Comments

Richardson RFPD has announced a new 28 V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex . The NPA1006 is a wideband GaN power amplifier optimized for 20 to 1,000 MHz operation. This device has been designed for saturated...

LISTED UNDER: Amplifiers, Power | GaAs / FET / IC

Pages

X
You may login with either your assigned username or your e-mail address.
The password field is case sensitive.
Loading