GaAs / FET / IC
RFMW Introduces 400-Micron Discrete FET
May 16, 2013 11:48 am | by WDD Staff | Product Releases | CommentsRFMW, Ltd. announces a discrete 400-Micron GaAs pHEMT FET. Designed using TriQuint’s proven 0.25 um pHEMT process, power, and efficiency at high-drain bias operating conditions are optimized. The TriQuint TGF2040 allows self-biasing and eliminates the need for a negative supply voltage.
LISTED UNDER: Amplifiers, Other | GaAs / FET / IC | Components, Other
CTT’s New GaN-Based, Solid-State Power Amplifiers
May 1, 2013 10:50 am | by WDD Staff | Product Releases | CommentsCTT Inc. has introduced a new line of over 30 durable, compact, GaN-based solid-state power amplifiers capable of pulsed and continuous-wave (CW) power levels to 40 W at the frequencies used in defense radar, DF, and EW systems, from 2 to 18 GHz. Whether narrowband, wideband, or ultra-wideband...
LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential
Touchstone's New Micropower Op Amps
April 15, 2013 11:26 am | by WDD Staff | Product Releases | CommentsTouchstone Semiconductor has announced that it has added two new micropower operational amplifiers (op amps) to its “NanoWatt Analog” high-performance analog integrated circuits portfolio: the TS1003 and TS1005, both available in SC70-5 packaging and ready to ship from Digi-Key...
LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential
Custom MMIC's New Broadband Driver Amplifier
April 4, 2013 11:04 am | by WDD Staff | Product Releases | CommentsCustom MMIC has announced the CMD158P3, a new broadband driver amplifier ideally suited for mixer LO chains, passive multipliers, and medium power applications. Features include a frequency range from 6 to 14 GHz and 20 dB of gain with +20 dBm of saturated power.
LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential
Comtech Xicom Technology Introduces New Linear X-Band GaN Amplifier
March 19, 2013 10:41 am | by WDD Staff | Product Releases | CommentsComtech Xicom Technology, Inc. has introduced a compact and highly efficient GaN-based amplifier for X-band MILSATCOM service. Model XTSLIN-100X-B1 features 100 W of WGS linear power, a compact, rugged 32-lbs. package, and a footprint of 6.8” x 10.5” x 17”.
LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential
Empower RF Systems' 1 kW PA systems in 5U chassis
March 8, 2013 10:42 am | by WDD Staff | Product Releases | CommentsEmpower RF Systems is delivering units from its “Size Matters” 1 kW Power Amplifier portfolio to Richardson RFPD as an integral part of a Test & Measurement promotion that Richardson RFPD is sponsoring on its website. The two companies are collaborating on a package of free accessories...
LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential
New All-Digital Motion Control Amplifiers from PMD
March 6, 2013 10:26 am | by WDD Staff | Product Releases | CommentsPerformance Motion Devices, Inc. (PMD) has announced ATLAS, a new family of single-axis amplifiers that provide high-performance torque control of DC Brush, brushless DC, and step motors. ATLAS amplifiers are packaged in a compact solderable format and utilize standard through-hole pins for all connections.
LISTED UNDER: Amplifiers, Other | Amplifiers, Power | Differential
CTT’s New, Compact, GaN Solid-State Power Amplifiers
February 7, 2013 10:21 am | by WDD Staff | Product Releases | CommentsCTT, Inc. has announced a new family of compact, GaN-based solid-state power amplifiers (SSPAs) operating in the 6.4 to 11.0 GHz frequency range for a wide variety of RF and microwave applications including commercial, industrial, and military radar applications.
LISTED UNDER: Amplifiers, Power | GaAs / FET / ICWiMAX and LTE: Closer than You Think
May 19, 2010 11:04 am | by Joe Cozzarelli, Senior Director Broadband RF Products and Glenn Eswein, Director Of Product Marketing, Broadband RF Business, ANADIGICS | Articles | CommentsAfter three years of deliberation, the IEEE802.16m air interface definition will be ready for prime time in the next few months. This critical step toward creating true 4G cellular technology based on WiMAX is important enough to earn compliant products a new name: WiMAX 2. Further proof came last month, when an impressive subset of the WiMAX community created the WiMAX 2 Collaboration Initiative to "improve the economics of mobile broadband" and "to create a better value chain for service providers.
DSP Offers Next-Generation Acceleration
April 8, 2010 1:19 pm | Product Releases | CommentsFreescale Semiconductor has introduced its MSC8155 digital signal processor (DSP), a higher performance and cost-optimized version of the company's flagship MSC8156 DSP based on the latest StarCore technology. The MSC8155 includes next-generation acceleration and interconnect technologies that boost overall chip performance and further enhance the capabilities of broadband wireless base station equipment.
500 to 1000 MHz, 50W Pallet Amplifier
April 8, 2010 1:19 pm | News | CommentsThe new LDU50-CW (RES-INGENIUM) is a 500 to 1000 MHz Class AB pallet amplifier designed for heavy duty operation in military and law-enforcement jamming applications (50W, CW). This rugged RoHS-compliant amplifier features two Freescale™ MRF9030LR1 power transistors (LDMOS), achieves 15 dB gain, maintains impressive gain-flatness of +/-0.
Highly-Integrated GaAs MMIC Up-Converter Available in 4 x 4 mm QFN Package
April 8, 2010 1:19 pm | Product Releases | CommentsNow available from Mimix Broadband, Inc. is a 5.6 to 10.5 GHz GaAs MMIC up-converter that integrates a double balanced image reject mixer, LO buffer amplifier, RF buffer amplifier and variable attenuator, all within a fully molded 4x4mm QFN package. This RoHS-compliant, packaged up-converter has an output third order intercept point (OIP3) of +25 dBm, a conversion gain of 8 dB and a typical image rejection of 15 dBc.
LISTED UNDER: Semiconductors, MMICBenchmarking RF Front Ends Powered by DC-DC Converters Across a Discharging Battery
March 29, 2010 10:35 am | Articles | CommentsBy Keith Adkins and Jackie Johnson, RF Micro Devices In the last decade mobile device users have seen unprecedented changes in technology. These changes have brought more functionality and lower cost to the overall handset market. Users are demanding more and more functionality in mobile devices, which comes at the cost of talk time.
Switches Provide Exceptional Bandwidth in Small Chipscale SMT Package
June 18, 2009 8:16 am | News | CommentsM/A-Com Technology Solutions showcased a new family of surface mount broadband 2 to 20 GHz HMICTM PIN diode switches for Test Instrumentation, Satellite and other wide frequency range applications at the 2009 Institute of Electrical and Electronics Engineers (IEEE) Microwave Theory & Techniques Symposium (MTT-S) show last week.
RFMD® Announces the Availability of Gallium Nitride (GaN) Foundry Services
June 18, 2009 8:16 am | News | CommentsRF Micro Devices, Inc. announced at the show that the company has formed a gallium nitride (GaN) Foundry Services business unit to supply high-reliability, high-performance and price-competitive GaN semiconductor technology into multiple RF power markets. The RFMD GaN Foundry Services business unit will leverage the company’s expertise in gallium arsenide (GaAs) manufacturing capacity and cycle times, as well as a range of new customer services, to drive shorter time-to-market and minimize time between initial wafer order and final delivery.
