New 28 V GaN-on-Si RF Power Amplifier from Nitronex
Richardson RFPD  (LaFox, IL) has announced a new 28 V gallium nitride-on-silicon (GaN-on-Si) RF power amplifier from Nitronex  (Morrisville, NC). The NPA1006 is a wideband GaN power amplifier optimized for 20 to 1,000 MHz operation. This device has been designed for saturated and linear operation with output power levels to 15 W (41.8 dBm). Additional features include:
- An industry-standard surface mount DFN6X5-8 plastic package.
- An input matched to 50 Ω.
- A high drain efficiency of >50%.