Infineon Broadens RF Portfolio with New Transistors
Infineon Technologies  (Nuremburg, Germany) has introduced its 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application. The higher power output across the entire 470 – 806 MHz TV broadcast band gives amplifier designers the option to use fewer transistors to achieve target output power, which translates to cost savings due to lower component count and higher reliability as a result of simpler design.
The high power PTVA047002EV features:
- Rated power output of 135 W average.
- DVB-T (8k OFDM) signal.
- 17.5 dB gain.
For a broadcast amplifier design of 12KW, the increased power can eliminate up to 20 RF power transistors, representing a significant reduction in total system cost while increasing reliability due to simpler, lower component count design.
The lower power PTVA042502EC and PTVA042502FC transistors feature:
- 55 W average output power.
- 18.5 dB gain.
- DVB-T (8k OFDM) signal
- Well-suited for applications such as gap fillers.
- Excellent efficiency, typically 26 percent at 500MHz, which reduces heat output.
- Low thermal resistance (Rth 0.20 degree C/Watt) of the package, a characteristic of Infineon’s 50V LDMOS technology that allows for better thermal management and smaller heat sink designs. This further contributes to lower cost and higher reliability.
Other important features shared by all Infineon 50V LDMOS transistors include:
- High ruggedness (able to withstand 10:1 VSWR load mismatch with 3 dB input overdrive).
- Wide gate source voltage range (-6V to 12V).
- Integrated ESD protection.
For more information, please visit www.infineon.com