M/A-COM Technology Solutions’ New GaN on SiC HEMT Transistor
M/A-COM Technology Solutions Inc.  (M/A-COM) (Lowell, MA) has introduced a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications. The MAGX-001214-500L00 features:
- A 500 W output power.
- 19 dB of gain and 55% efficiency.
- A power of 50 V.
- A frequency range from 1,200 to 1,400 MHz.
For more information visit www.macomtech.com .