GaAs MMIC Delivers 32 dB Gain and Includes On-Chip Gate Bias Circuitry
Mimix Asia introduces a 2.7 to 3.8 GHz GaAs MMIC power amplifier that has 32 dB large signal gain and 41.5 dBm saturated output power. Identified as XP5002BD, this device includes on-chip gate bias circuitry and delivers 40% power added efficiency. The XP5002-BD is well suited for radar, satellite and commercial applications. Mimix performs 100% on-wafer RF, DC and output power testing on the XP5002-BD.