Wireless and Optical Communications Applications
Jazz Semiconductor®, announces the release of its 130 nm SiGe BiCMOS technology (SBC13) designed for high speed wireless and optical communications applications. This process combines industry standard 130 nm CMOS with 200 GHz HBT NPN transistors for high performance RF and millimeter-wave integrated circuits. The technology offering includes advanced analog components (inductors, capacitors, and resistors) with high-density digital circuitry to provide scaling of both the analog and digital blocks in a Systems-on-Chip (SoC) approach. This technology enables the design of the highest performance circuits in advanced high speed optical, wireless and millimeter-wave applications. SBC13 uses a 1.2 to 3.3 V dual gate oxide process to form the base CMOS, with the addition of SiGe transistors offering a range of Ft, Fmax and BVceo for design flexibility, with an Ft up to 200 GHz and a separate higher voltage transistor.