Packaged Gallium Nitride
Cree Inc. announces its 15 W packaged gallium nitride (GaN) high electron mobility transistor (HEMT), the CGH27015. Optimized for high efficiency, high gain and wide bandwidth, Cree’s CGH27015 is designed to provide exceptional linear power and efficiency for North American WiMAX and broadband wireless access applications operating between 2.3 and 2.9 GHz. The CGH27015 typically produces 2.5 W of average output power and 24% drain efficiency over the frequency range of 2.3 to 2.9 GHz. This represents up to 30% improvement in device efficiency when compared with traditional technologies such as silicon LDMOS or GaAs under WiMAX signals and requirements (802.16-2004). It also features 14.5 dB of small signal gain and 2% error vector magnitude (EVM) under orthogonal frequency-division multiplexing (OFDM) modulation when operated at 28 V.