Siliconix incorporated, a subsidiary of Vishay Intertechnology, Inc. announces a p-channel power MOSFET. Used on the synchronous buck high side, a p-channel MOSFET can be turned on with a gate drive that is lower than the battery voltage. Combining on-resistance of 0.051 Ω with a low typical gate charge of 7 nC, the Si3867DV delivers an on-resistance-times-gate-charge figure of merit (FOM) of 0.36. The Si3867DV has been optimized with a low Qgd/Qgs ratio of 0.7 to eliminate secondary turn-on effects.
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