Fairchild Semiconductor introduced a total of eleven new MOSFETs. These include single and common-drain dual devices in both N-channel, and P-channel versions. The new parts have breakdown voltage ratings from 20 V to 30 V, maximum RDS(on)
ratings from 75 milliohms to 2.9 milliohms, and are gate-drive voltage specified, as low as 2.5 V. The single P-channel products are targeted at a variety of load management applications, while the single N-channel MOSFETs are ideal for DC/DC converter applications as well as load management applications. The dual MOSFET devices are perfectly suited for Li-ion battery pack applications
Fairchild's BGA packaging offers significant size and performance benefits over traditional leaded packaging devices. BGA MOSFETs can dramatically reduce the overall profile of the circuit board with a 0.76mm maximum mounted height, while achieving very low RDS(on). Additionally, BGA packages consume much less board area than equivalent leaded packages, yet have lower profiles than TSSOP-8, Micro8, and SO-8 packages. This advanced packaging allows for topside heat sinking to further improve the package current density.