GSM Power Amplifier Module
Ericsson Microelectronics announces a quad-band RF power amplifier (PA) module, PBA31603 which can be used by manufacturers throughout the world in the development of quad-band GSM phones. Its compact design and integral 50 ohm matching networks ensure fast and simple implementation in new phones. The PBA31603 consists of two amplifiers on the same chip: one for GSM850/900 and the other for DCS1800/PCS1900. It is ideal for dual, triple or quad band GSM handsets. Its highly integrated, single-ended design means minimum external component count and efficient operation from a single +3.5V power supply. The device produces up to +35 dBm output (GSM900) and internal components match the AC-coupled inputs and outputs to 50 ohms. Up to 50% duty cycle can be achieved without performance degradation. High efficiency and less than 10 μA current consumption in power-down mode ensure long battery life. An analog ramp signal controls power output and a logic input is used for band switching. The amplifier is much less susceptible to ESD damage than GaAs devices, resulting in both rugged performance and better board yields during manufacturing.