GaAs Transistors for Base Station Receiver Designs
The 400-micron ATF-551M4 is a single voltage E-pHEMT GaAs FET that does not need a negative gate bias voltage for operation. The device's low noise performance and low power consumption makes it suitable as a LNA for wireless receiver applications in the 2 to 10 GHz frequency range.
The 1600-micron ATF-331M4 is a dual-voltage PHEMT based on Agilent's process. The device's combination of high linearity and low noise figure is optimized for the design of the first or second stage of a base station LNA. Typical performance at 2 GHz (4 V, 60 mA) is 0.6 dB NF, +31 dBm OIP3, +19 dBm P1dB and associated gain (Ga) of 15 dB.