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Is Solid-State RF the Next Energy Source?

Mon, 06/10/2013 - 4:48pm
NXP Semiconductors N.V.

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NXP ignites innovation with RF power transistors dedicated to 2.45-GHz ISM band.

Eindhoven, Netherlands and Seattle, Washington – Could radio-frequency signals become the next major energy source for industrial, scientific and medical (ISM) applications? At the IEEE International Microwave Symposium this week, NXP Semiconductors N.V. [NASDAQ: NXPI] is introducing the industry’s first complete RF power transistor portfolio designed specifically for the 2.45-GHz ISM frequency band, enabling RF energy to be used as a clean, highly efficient and controllable heat source.

NXP is demonstrating a wide range of RF-powered applications at IMS 2013, including an RF spark plug – a compelling alternative to conventional ignition systems for automotive engines; an RF plasma lamp delivering bright, sun-like light at 140 lumens per watt; and a solid-state cooker that can heat food safely, uniformly and precisely. A video exploring the possibilities enabled by RF energy is available here: http://youtu.be/Fnf05jPTDto           

Optimally matched to the 2.45-GHz ISM band, the NXP BLF2425M and BLF25M series of RF power transistors achieve best-in-class efficiencies in excess of 52% and offer a full range of power levels between 12 and 350 W. NXP developed this dedicated ISM portfolio while working with lead customers on RF-powered solutions for home appliances for cooking, heating and drying; medical devices for precision medical procedures; and automotive engines. The devices are based on NXP’s latest 28V LDMOS processes and all feature NXP’s field-proven ruggedness, manufacturing consistency and long-term reliability, which enable these transistors to drive the typically mismatched loads of ISM applications.

“From automotive ignition to RF-powered lighting and household appliances, the potential energy savings we could realize using RF power on a societal scale are tremendous,” says Mark Murphy, director of marketing, RF power product line, NXP Semiconductors.

“Over the last 10 years, engineers exploring the ways to harness RF energy have had to be content using brute force magnetrons with extremely limited or next to no control – with absolute power level the only parameter they could adjust for industrial, scientific and medical applications. With our new dedicated 2.45-GHz ISM portfolio, we’re providing solid-state RF power transistors that have been optimized for this important frequency band, with a complete set of options for different power levels, control and cost. We look forward to working with our customers as they use RF energy as a cleaner, more efficient and controllable power source for exciting new applications.”

Check out:
•    VIDEO: The RF Energy Revolution: Clean, Efficient, Controllable Power: http://youtu.be/Fnf05jPTDto    
•    NXP LDMOS RF power transistors for the 2.45-GHz ISM band: http://bit.ly/12rTVRH       

For more information visit www.nxp.com.

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