MicroWave Technology Announces Advanced GaAs pHEMT-Based Ultra-Broadband Driver MMIC Amplifier up to 50 GHz

Fri, 06/07/2013 - 5:20pm
MicroWave Technology Inc.


Fremont, CA -- MicroWave Technology Inc. (MwT), the RF division of IXYS Corporation, announced that it offers an advanced AlGaAs/InGaAs pHEMT-based MMIC ultra-broadband driver amplifier product up to 50 GHz. The product is targeted at applications including fiber optics communications, microwave/mm-wave communications systems, microwave/mm-wave testing equipment, and military applications.

The MMA-005022 is an ultra-broadband Traveling Wave Amplifier MMIC with medium output power and high gain over a full range of nearly DC 30 KHz to 50 GHz. It offers a typical +22 dBm saturated power and +20 dBm output power at a 1dB gain compression point at 30 GHz. The MMIC chip typically has 16 dB gain across the band with +/- 1dB gain flatness. The typical input/out return loss for the chip is 15 dB.  The DC bias is 200 mA drain current with 7V drain voltage.

“The excellent performance of the MMA-005022 ultra-broadband MMIC amplifier up to mm-wave frequency range, together with its high reliability and competitive cost, make this part an excellent choice for wide range applications including modulator driver for fiber optics communication, wireless communication infrastructure, microwave and mm-wave frequency testing equipment, military/EW, and high-rel/space, etc.,” commented Dr. Greg Zhou, General Manager of MwT.

MMA-005022 is fully matched for both input and output terminals for easy cascade and also available in the low-cost R4 (4mm x 4mm) surface mount package. The Mean Time Before Failure (MTBF) for this MMIC amplifier is over 100 years at 85°C ambient temperature. Evaluation board for the packaged version of this part is also available now. For detailed datasheets and information on the evaluation board, please visit the MwT website at Contact MwT Sales at or call (510) 651-6700 for sample requests and price quotes.


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