Peregrine Semiconductor announced from booth # 2009 at the International Microwave Symposium (IMS2012) in Montreal, the SP4T PE42540 RF switch. Designed on the latest UltraCMOS® process technology version, STeP5, the HaRP™ technology-enhanced PE42540 switch has a frequency range of 10 Hz to 8 GHz, with low insertion loss of 0.
Rogers Corporation and representatives of its Advanced Circuit Materials Division will be at the upcoming 2012 IEEE International Microwave Symposium (IMS) to help attendees learn more about Rogers’ wide range of high frequency circuit materials. The 2012 IEEE International Microwave Symposium ( www.
Richardson RFPD announces immediate availability and full design support capabilities for a new family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radio frequency (RF) transistors from Microsemi Corporation (Microsemi). The common source GaN on SiC transistors are internally-matched for optimal performance and specifically designed for S-band radar applications, making them easier to design-in than unmatched broadband devices.
Driven by a strong demand from their customers, TelExpress has approved a significant investment to update their infrastructure, including adding more sales professionals to their staff to service the customer more efficiently. “The timing is right for us” said Sherry Clinard, CEO. “Our sales continue to grow, and with this growth we want to maintain the high level of service our customers are accustomed to.
Amid discussions Tuesday of ways social media can be used to ensure a sustainable future for the planet, one Rio+Social conversation emphasized how technology is accelerating and improving humanitarian relief. Antonia Guterres, U.N. high commissioner for refugees, Hans Vestberg, CEO of Ericsson, and Ertharin Cousin, executive director of the World Food Programme discussed how their respective organizations use technology to address the world’s challenges, in a panel moderated by Robb Skinner, associate director of the U.
RF Micro Devices, Inc. today announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride (GaN) RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies. RFMD’s RFHA1025 complements the recently released 380-watt RF3928B, the highest output power S-Band device in RFMD’s matched power transistor family.
Cypress Semiconductor Corp. and Nuvation Research Corp. today announced the production release of a rapid-prototyping solution that simplifies streaming video, images and other data from Altera FPGAs to a host processor at speeds up to 400 Megabytes per second. This solution includes a SuperSpeed USB 3.
New protection method significant improvement from conventional approach of protecting printed devices, meets requirements for durability and low cost. Thin Film Electronics ASA (“Thinfilm”) today announced that it has developed and is patenting a low-cost printable protection for ferroelectric memory products.
New Fiber Optic Network Connects Schools With High-Speed Bandwidth, Enabling District-Wide Access to Online Testing and Educational Tools Richmond Public Schools is bringing high-speed Internet bandwidth to 58 locations across the district--reaching every classroom--with the installation of a new fiber optic network from Windstream Corp.
Computer Simulation Technology AG (CST) announces enhancements to the transient solver of CST MICROWAVE STUDIO® at MTT-S IMS 2012. There is an increasing need to model ever more complex devices more realistically. This helps avoid additional cost and time intensive prototyping cycles but can put a great strain on computational resources.
Aeroflex Limited announced today that it has added IEEE 802.11ac capability to its S-Series RF signal generator and analyzer product line. First introduced in 2010, the S-Series offers top-of-the-range performance at a mid-range price. Designed for use by engineers in wireless local area network (WLAN) research, design, and manufacturing, the new 802.
At IMS booth #1129 in Montreal, Canada, Vaunix Technology Corporation will be offering demos of their new LSW Series Switches and new models in their family of LDA Series Digital Attenuators. The switch line is a new Lab Brick product family offering 10 W power handling capability and reliable, high isolation, low power solid state switching in both single pole double throw (SPDT) and single pole four throw (SP4T) configurations.
Rugged High-Frequency Low Noise RF Transistors Meet Demanding Requirements of 5 GHz Wireless ApplicationsJune 19, 2012 5:16 am | Comments
At the IEEE MTT-S International Microwave Symposium today, Infineon Technologies AG launched a new SiGe:C (Silicon-Germanium: Carbon) HBT (hetero-junction bipolar transistor) device series for Low Noise Amplifier (LNA) applications. The new BFx840xESD series is particularly well-suited for design of consumer wireless products operating in the 5-6 GHz range, including current and next generation WiFi® access points and modules.
Crystek Crystals Corporation has launched the CVSS-945 – a True SineWave Voltage Controlled Crystal Oscillator (VCXO) providing -172.9 dBc/Hz noise floor at 1 MHz offset and +/-20 ppm min. APR pullability. This high-performance VCXO is available in the industry standard 9x14mm SMD package and is engineered to MIL-STD-883 and MIL-STD-202 specifications.
RF power market leader Freescale Semiconductor has introduced new Airfast™ transistors engineered to boost the efficiency, peak power and signal bandwidth of next-generation base stations. With the new offerings, Freescale’s flagship Airfast RF power product line now includes at least one solution for each cellular band and supports both small and large cell base station deployments.