Industry-Leading High-Performance RF Components at IEEE IMS 2012
RF Micro Devices, Inc. announced today it will showcase its broad portfolio of products and technologies for the wireless and wired broadband markets at the upcoming IEEE International Microwave Symposium (IMS), held June 17-22, in booth #1210 at the Palais des Congres in Montreal, Canada.
RFMD will exhibit innovative products serving a wide range of end-markets, including: GaN Power, point-to-point microwave radio, WiFi, wireless infrastructure, and smart energy AMI/ZigBee(R). In addition, RFMD will introduce its 2012-2013 Product Selection Guide, which features approximately 900 products, including more than 80 recently released products.
RFMD's GaN-based products on display will include new high-power transistors and ICs. RFMD will host booth demonstrations featuring a new 25-watt GaN broadband power IC and a new GaN high-power RF switch. RFMD will also showcase its point-to-point product portfolio for wireless backhaul applications, with microwave MMICs operating from 10 to 20 GHz -- including upconverters, downcoverters, MMIC VCOs, and power amplifiers.
For the 2.4GHz and 5GHz WiFi markets, RFMD will promote several new front-end products supporting smartphones, wireless networking, computing, tablets, gaming consoles, printers, home automation, and automotive. For wireless infrastructure and general purpose RF applications, RFMD will display an expanded portfolio of variable gain amplifiers (VGAs), multi-stage low-noise amplifiers (LNAs), high linearity power amplifiers, and attenuator products.
RFMD representatives will present papers, chair sessions, and host proceedings throughout the Microwave Week 2012 technical program at the IEEE International Microwave Symposium.
Posted by Sara Cohen, Editorial Intern
June 11, 2012