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RFMD’S PowerSmart™ Wins Compound Semiconductor Industry’s Most Innovative Device Award

Mon, 04/04/2011 - 8:44am
RF Micro Devices, Inc. today announced that Compound Semiconductor magazine has recognized the Company’s PowerSmart™ power platform (RFRD6460) as the compound semiconductor industry’s most innovative device of 2011. The award was presented on March 22, 2011, by Compound Semiconductor magazine during the 2011 CS Industry Awards in Frankfurt, Germany.

RFMD’s revolutionary PowerSmart power platforms feature an RF Configurable Power Core™ that delivers multiband, multi-mode coverage of all cellular communications modulation schemes, up to 4G LTE 64QAM. PowerSmart power platforms also include all necessary switching and signal conditioning functionality in a compact reference design, providing leading device manufacturers a single scalable source for the entire cellular front end.

The exceptional design flexibility of RFMD’s PowerSmart power platforms enables designers of smartphones and tablets to eliminate months of development time and cover broader segments of the market with a single design, while saving considerably on size, current consumption and R&D cost, versus competitive offerings.

Bob Bruggeworth, president and CEO of RFMD, said, “We are extremely pleased that Compound Semiconductor magazine has recognized RFMD’s PowerSmart as the compound semiconductor industry’s most innovative device of 2011. RFMD is sharply focused on expanding our leadership in compound semiconductors into multiple markets, and we believe PowerSmart is at the forefront of a technology shift to converged front ends in multi-mode, multiband smartphones.

“In addition to our GaAs-based PowerSmart technology, RFMD’s efforts in GaAs-based concentrated photovoltaics and GaN-based high power amplifiers are serving to extend the role of compound semiconductors in the world’s fastest growing markets.”

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