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RFMD® Expands Foundry Services Offerings to Include Gallium Arsenide (GaAs) Technologies Manufactured in Europe

Mon, 10/11/2010 - 10:15am
GREENSBORO, N.C., (GlobeNewswire via COMTEX News Network) -- RF Micro Devices, Inc. announced the company has added its world-class Gallium Arsenide (GaAs) technology to RFMD's foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit.

Specifically, RFMD will make available three distinct GaAs pHEMT technologies optimized for high power, low noise and RF switching products. RFMD's 0.3-micron pHEMT technology delivers high power and is optimized for X-band phased array power amplifiers (PAs) and 8 to 16 GHz wideband military electronic warfare jammers.

RFMD's 0.25-micron pHEMT technology delivers low noise, medium power and high linearity and is targeted at applications including low noise front ends and transmitter MMICs.

RFMD's 0.6-micron pHEMT technology provides low noise and high linearity switching of RF signals and is designed for applications including wireless front ends and transmit/receive modules.

All of the process technologies are manufactured in RFMD's Newton Aycliffe, United Kingdom fab, providing RFMD's Foundry Services customers access to European technology with ease of European import/export controls.

RFMD currently provides Foundry Services customers access to two of RFMD's gallium nitride (GaN) process technologies from its Greensboro, NC wafer fab : GaN1, targeted at high power applications, and GaN2, targeted at high linearity applications. RFMD also offers an Integrated Passive Component (IPC) technology optimized to complement high power applications. RFMD's advanced GaAs pHEMT technologies are complementary to the company's GaN technologies and other power semiconductor technologies for the design of multi-chip modules (MCMs).

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