RFMD® Announces the Availability of Gallium Nitride (GaN) Foundry Services
Thu, 06/18/2009 - 8:16am
RF Micro Devices, Inc. announced at the show that the company has formed a gallium nitride (GaN) Foundry Services business unit to supply high-reliability, high-performance and price-competitive GaN semiconductor technology into multiple RF power markets. The RFMD GaN Foundry Services business unit will leverage the company’s expertise in gallium arsenide (GaAs) manufacturing capacity and cycle times, as well as a range of new customer services, to drive shorter time-to-market and minimize time between initial wafer order and final delivery. RFMD is a leading manufacturer of GaAs compound semiconductors. The company’s GaN manufacturing is interchangeable with its GaAs manufacturing and directly benefits from the scale and demonstrated expertise of RFMD’s industry-leading wafer fabrication capability. RFMD’s offering of GaN foundry services is distinctive in the industry because RFMD operates the industry’s largest GaAs fabrication facility (fab) and has supplied its customers billions of high-reliability, high-quality compound semiconductor based RF components. By utilizing its existing, high-volume manufacturing assets, RFMD is able to deliver foundry customers GaN technology with predictable, industry-leading reliability and increased uniformity. RFMD offers industry-leading cycle times and estimates its GaN cycle times through its wafer fab are typically 30-40% faster than its competition. By leveraging RFMD’s deep knowledge of semiconductor process models to accurately predict product performance, RFMD’s Foundry Services business unit can lower customer development costs by reducing the number of prototype runs necessary to meet customer specifications. Customer applications expected to benefit from RFMD GaN include commercial and defense power applications including wireless infrastructure, CATV line amplifiers, broadband communication, power amplifiers and various defense radar systems.