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NXP introduces a highly advanced QUBIC4 BiCMOS silicon technology, delivering higher levels of integration and performance at high frequencies, all in a cost effective way. NXP’s commitment to furthering the development of QUBIC4 BiCMOS will now enable future generations of RF products such as low noise amplifiers, medium power amplifiers and LO generators for e.g. mobile phones and communications infrastructure equipment to operate at a higher performance level.

The innovative SiGe:C process of NXP now allows customers to incorporate more functionality into devices at competitive cost and requiring less space. The state-of-the-art QUBIC4 technology speeds the migration from GaAs components to silicon by enabling cutting-edge low noise performance and IP availability, ensuring consumers can enjoy improved voice, picture and data signal clarity with more bandwidth for all two-way data transmissions.

In particular, NXP’s QUBIC4 process can help speed satellite tracking and fix for GPS systems, improve basestation performance, enable e-metering utilities deployments as well as boosting WLAN, satellite and microwave radio applications.

NXP’s QUBIC4 process is also available for ASIC service, combining RF and microwave design IP and application knowledge, state-of-the-art low cost RF packaging and in-house fabrication for volume production.

Visit us at Booth 2403  
NXP Seminconductors
http://www.nxp.com/