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Samsung Electronics Co., Ltd. has begun mass producing two gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology. The company's seven-month window between new process technology development and mass production of the new DDR3 (Jan. to Jul. '09) will allow OEMs to optimize their next-generation systems more quickly. In addition, moving to a 40 nm production process will provide around a 60 percent increase in production productivity over use of a 50 nm process. Besides 16 GB, 8 GB and 4 GB RDIMMs for servers, Samsung will produce UDIMMs (unregistered in-line memory modules) for workstations or desktop PCs or SODIMMs (small outline dual in-line memory modules) for notebook PCs of up to 4GBs, using the new chip. The monolithic 2 Gb chips are energy-efficient solutions for high-density, high-performance memory applications. Each supports a data rate of up to 1.6 gigabits per second (Gbps) at 1.35 volts, up to twice as fast as an 800 Mbps 1 Gb-based dual-die package.

Samsung Electronics Co., Ltd.
http://www.usa.samsungsemi.com