NEC’s NE350184C Hetero-Junction FET delivers typical noise figures of 0.70 dB with 13.5 dB associated gain at 20 GHz. Suitable for use as a front-end first stage LNA, the low noise performance of the device can improve overall system sensitivity, while the high gain helps mask noise contributed by the second stage amplifier. The product is designed for engineers designing VSAT and DBS receivers and K-Band point-to-point links, and it is housed in a rugged Pb-Free 84C ceramic package.
NEC Electronics Inc.
2880 Scott Boulevard, M/S SC900 P. O. Box 58062
Santa Clara, CA, 95052
