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NEC Electronics America, Inc. introduces the NP series of power MOSFETs. The NP Series features a combination of trench technologies and advanced packaging solutions that result in low leakage current and enable a low on-state resistances (Rds_on): 1.4 mΩ (typical). The MOSFETs target markets requiring efficient power management and high current capability, such as automotive and low-voltage motor control. The first device in the series is the NP110. By combining the company's UMOS-4 process technology with a trench configuration, the company has increased the MOSFET's cell density, resulting in decreased Rds_on. The UMOS-4 process reduces the size of the trenches and other structures with an ultra fine 0.25 µ design rule. In addition, by fabricating MOSFET structures along the sides of the trenches, designers can reduce the amount of silicon space required. Together, these technologies achieve a cell density of well over 180 Mcells/inch².

NEC Electronics America, Inc.