Infineon Technologies AG introduces its next generation LDMOS technology. Used for manufacturing high-power RF transistors used in applications such as power amplifiers in wireless infrastructure basestations and repeaters, this process operates at frequencies supporting high-speed wireless access networks. It will yield transistors that operate at up to 3.8 GHZ, which is within the WiMAX and IEEE 802.16 wireless access frequency bands. Power density is also increased by 25%, which allows a high-power device to be placed in a smaller package.
Infineon Technologies AG
Infineon Technologies
RF Power
18275 Serene Drive
Morgan Hill, CA, 95037
