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Freescale Semiconductor has entered the gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) marketplace with the introduction of four new devices designed and optimized specifically for high performance in macro base stations, repeaters and femtocells employed in wireless networks. The devices address low-noise amplifiers and transmit power amplifiers – two elements of wireless infrastructure equipment for which extremely high RF performance is critical. The devices are also designed for low power consumption, resulting in optimized energy efficiency and long-term reliability. The MML09211H is an enhancement-mode pHEMT MMIC low-noise amplifier suited for applications ranging from W-CDMA base stations in the 865 to 960 MHz band to the high-datarate networks currently being implemented in the 728 to 768 MHz band. The MMA20312B is a two-stage InGaP HBT power amplifier designed for use in wireless base stations as well as repeaters and femtocells. Specifically, for femtocells this device enables high energy efficiency while meeting linearity requirements. The amplifier covers 1800 to 2200 MHz, delivers P1dB output power of 31 dBm at 2140 MHz and small-signal gain of 26 dB. The two other new broadband MMIC amplifiers are equally suited for use as driver amplifiers in the transmit chain or as second-stage low-noise amplifiers in the receive chain.

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