Vishay Intertechnology, Inc. introduces the first two power MOSFETs to be offered in its PolarPAK® package, which uses double-sided cooling to reduce thermal resistance, package resistance, and package inductance for a more efficient, faster-switching power MOSFET. The first PolarPAK power MOSFETs are the 30 V n-channel SiE802DF and SiE800DF. Optimized for the low-side control switch in synchronous rectification DC/DC converters, the SiE802DF offers low on-resistance of 1.9 mΩ maximum at a 10 V gate drive (2.6 mΩ maximum at 4.5 V) and can handle current levels up to 60 A. The SiE800DF, optimized to work as the low-duty-cycle high-side MOSFET in synchronous DC/DC converter designs, features a very low typical gate charge Qg of 12 nC, with on-resistance of 7.2 mΩ maximum at 10 V and 11.5 mΩ at 4.5 V. The PolarPAK power MOSFETs, which have the same footprint dimensions of the standard SO-8, dissipate 1°C/W from their top surface and 1°C per Watt from their bottom surface. This provides a dual heat dissipation path that gives the devices twice the current density of the standard SO-8.
Vishay Intertechnology, Inc.
Vishay Intertechnology, Inc.
63 Lincoln Hwy.
Malvern, PA, 19355-2120
