CEL announces two GaAs HJ-FETs from NEC. Designed for use as LNAs and driver amplifiers in satellite radio antennas, GPS antennas and other L-band applications, the NE3508M04 and NE3509M04 deliver low noise and high associated gain. Ideal for use as a first stage amplifier, the NE3509M04 features a 0.35 dB noise figure with 16.3 dB of gain (at 2.4 GHz, 2 V, 10 mA). With a 0.41 dB NF and 14.0 dB gain, the NE3508M04 makes a suitable second or third stage companion device. Both are housed in NEC’s miniature, Pb-Free M04 4-pin flat-lead package.
California Eastern Laboratories
California Eastern Laboratories
4590 Patrick Henry Drive
Santa Clara, CA, 95054
