SiGe Transistor
NEC’s SiGe HBT is designed for VCO and LNA applications from 800 MHz to 6.0 GHz. The NESG2107 features improved frequency stability with low phase noise and low pushing/pulling performance. The 1/f noise corner frequency for this SiGe transistor is 5 KHz as opposed to 20 KHz in standard Silicon bipolar devices. The device also features low noise figures, high gain at low operating bias, and low DC power consumption. It’s available in two Pb-Free package options: NEC’s 19 package and the new, ultra miniature M33 package. The flat-lead M33 measures 0.64 × 0.84 mm and is 0.4 mm high making it suitable for miniature VCO modules and other designs that demand compact, low profile components.
California Eastern Laboratories
California Eastern Laboratories
4590 Patrick Henry Drive
Santa Clara, CA, 95054
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