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NEC's UHS3 NPN Silicon Germanium HBT wafer process is now producing transistors. The first device to employ this process is the NESG3031. This single-supply device (no negative bias required) is available in two Pb-Free packages: the M05 and NEC's miniature M14. Typical specifications (at 2 V, 6 mA) include: noise figure at 5.2 GHz is 0.95 dB; noise figure at 5.8 GHz is 1.1 dB; associated gain at 5.2 GHz is 10 dB; associated gain at 5.8GHz is 9.5 dB. NEC's M05 package features an industry-standard SOT-343 footprint, with a height of 0.59 mm. The M14 package has a footprint of 1.2 × 1.0 × 0.5 mm. NESG3031 transistors are suitable for short-range wireless, GPS, satellite radio, cordless phones, and 802.11a/b/g products.

California Eastern Laboratories

California Eastern Laboratories
http://www.cel.com